ZXTD09N50DE6_15 Datasheet, PDF (2/7 Pages) Diodes Incorporated – 50V DUAL NPN LOW SATURATION SWITCHING TRANSISTOR IN SOT26

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Diodes Incorporated
ZXTD09N50DE6
Absolute Maximum Ratings – Q1 & Q2 Common (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Base Current
Symbol
VCBO
VCEO
VEBO
IC
ICM
IB
Value
50
50
7
1
2
200
Unit
V
V
V
A
A
mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
(Notes 6 & 10)
Symbol
Power Dissipation
Linear Derating Factor
(Notes 7 & 10)
(Notes 7 & 11)
PD
(Notes 8 & 10)
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
(Notes 9 & 10)
(Notes 6 & 10)
(Notes 7 & 10)
(Notes 7 & 11)
(Notes 8 & 10)
(Notes 9 & 10)
(Note 12)
R_JA
R_JL
TJ, TSTG
Value
0.7
5.6
0.9
7.2
1.1
8.8
1.1
8.8
1.7
13.6
179
139
113
113
73
95.50
-55 to +150
Unit
W
mW/°C
°C/W
°C
ESD Ratings (Note 13)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit JEDEC Class
V
3A
V
C
Notes:
6. For a device surface mounted on 15mm x 15mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured
when operating in a steady-state condition.
7. Same as Note 6, except the device is surface mounted on 25mm x 25mm 1oz copper.
8. Same as Note 6, except the device is surface mounted on 50mm x 50mm 2oz copper.
9. Same as Note 8, except the device is measured at t < 5 seconds.
10. For device with one active die, both collectors attached to a common heatsink.
11. For device with two active dice running at equal power, split heatsink 50% to each collector.
12. Thermal resistance from junction to solder-point (at the end of the collector lead).
13. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
ZXTD09N50DE6
Document number DS33650 Rev. 6 - 2
2 of 7
www.diodes.com
May 2015
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