ZXT951K_15 Datasheet, PDF (4/7 Pages) Diodes Incorporated – 60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR

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Diodes Incorporated
ZXT951K
Electrical Characteristics (@T_A = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 9)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Emitter Cutoff Current
DC current transfer Static ratio (Note 9)
Symbol
BV_CBO
BV_CER
BV_CEO
BV_EBO
I_CBO
I_EBO
I_CER
h_FE
Min
-100
-100
-60
-7
-
-
-
100
100
50
15
-
Collector-Emitter Saturation Voltage (Note 9)
V_CE(sat)
-
-
-
Base-Emitter Saturation Voltage (Note 9)
Base-Emitter Turn-on Voltage (Note 9)
V_BE(sat)
-
V_BE(on)
-
Transitional Frequency
f_T
-
Output capacitance
Switching times
C_OBO
-
t_ON
-
t_OFF
Notes: 9. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤2%.
Typ.
-125
-125
-80
-8.1
<1
<1
<1
230
200
110
40
-13
-60
-115
-315
-1.05
-0.92
120
74
82
350
Max
-
-
-
-
-20
-10
-20
-
300
-
-
-25
-90
-165
-400
-1.2
-1.05
-
-
-
Unit
V
V
V
V
nA
nA
nA
-
mV
V
V
MHz
pF
nS
Test Condition
I_C = -100µA
I_C = -100µA, R_BE ≤1kΩ
I_C = -10mA
I_E = -100µA
V_CB = -80V
V_EB = -6V
V_CE = -80V, R_BE ≤1kΩ
I_C = -10mA, V_CE = -1V
I_C = -2A, V_CE = -1V
I_C = -6A, V_CE = -1V
I_C = -10A, V_CE = -1V
I_C = -0.1A, I_B = -10mA
I_C = -1A, I_B = -100mA
I_C = -2A, I_B = -200mA
I_C = -6A, I_B = -600mA
I_C = -6A, I_B = -600mA
I_C = -6A, V_CE = -1V
I_C = -100mA, V_CE = -10V
f = 50MHz
V_CB = -10V, f = 1MHz,
I_C = -2A, V_CC = -10V,
I_B1 = I_B2 = -200mA
ZXT951K
Document number: DS33642 Rev. 3 - 2
4 of 7
www.diodes.com
August 2012
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