ZXT951K_15 Datasheet, PDF (3/7 Pages) Diodes Incorporated – 60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR

Typical Thermal Characteristics
A Product Line of
Diodes Incorporated
ZXT951K
10
V
CE(sat)
Limit
10
V
CE(sat)
Limit
1
DC
1s
100m
100ms
10ms
T =25°C
amb
25mm x 25mm
10m
100m
1oz FR4
1
1ms
100µs
10
-V Collector-Emitter Voltage (V)
CE
Safe Operating Area
1
DC
1s
100m
100ms
10ms
10m
0.1
T =25°C
amb
50mm x 50mm
2oz FR4
1
1ms
100µs
10
-V Collector-Emitter Voltage (V)
CE
Safe Operating Area
60
T =25°C
amb
50 25mm x 25mm
1oz FR4
40
D=0.5
30
20
D=0.2
Single Pulse
10
D=0.05
D=0.1
0
100µ 1m 10m 100m 1 10 100 1k
Pulse Width (s)
Transient Thermal Impedance
30
T =25°C
amb
25
50mm x 50mm
2oz FR4
20
D=0.5
15
10 _D=0.2
Single Pulse
5
D=0.05
D=0.1
0
100µ 1m 10m 100m 1 10 100 1k
Pulse Width (s)
Transient Thermal Impedance
Single Pulse
T =25°C
amb
100
50mm x 50mm
2oz FR4
10
25mm x 25mm
1oz FR4
1
100µ 1m 10m 100m 1
10 100 1k
Pulse Width (s)
Pulse Power Dissipation
4.5
4.0
50mm x 50mm
3.5
2oz FR4
3.0
25mm x 25mm
2.5
1oz FR4
2.0
1.5
1.0
0.5
0.0
0 20 40 60 80 100 120 140 160
Temperature (°C)
Derating Curve
ZXT951K
Document number: DS33642 Rev. 3 - 2
3 of 7
www.diodes.com
August 2012
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