ZXT13N50DE6_15 Datasheet, PDF (4/7 Pages) Diodes Incorporated – 50V NPN LOW SATURATION SWITCHING TRANSISTOR

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Diodes Incorporated
ZXT13N50DE6
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 10)
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter Cutoff Current
Collector-Emitter Cutoff Current
ON CHARACTERISTICS (Note 10)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Output Capacitance
Turn-On Time
Turn-Off Time
Symbol Min
Typ
BVCBO 100
190
BVCEO
50
70
BVEBO 7.5
8.5
ICBO
—
—
IEBO
—
—
ICES
—
—
250
400
300
450
hFE
100
220
10
30
—
8
—
75
VCE(sat)
—
150
—
175
—
145
VBE(sat)
—
—
VBE(on)
—
—
fT
—
115
Cobo
—
31
t(on)
—
220
t(off)
—
830
Note: 10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
Max
—
—
—
100
100
100
—
900
—
—
12
100
200
230
180
1.0
0.9
—
—
—
—
Unit
Test Condition
V I_C = 100µA
V I_C = 10mA
V I_E = 100µA
nA V_CB = 80V
nA V_EB = 6V
nA V_CES = 80V
IC = 10mA, VCE = 2V
— ^{IC = 1A, VCE = 2V}
IC = 4A, VCE = 2V
IC = 10A, VCE = 2V
IC = 100mA, IB = 10mA
IC = 1A, IB = 10mA
mV I_C = 3A, I_B = 50mA
IC = 4A, IB = 100mA
IC = 4A, IB = 400mA
V I_C = 4A, I_B = 100mA
V I_C = 4A, V_CE = 2V
MHz
pF
ns
ns
VCE = 10V, IC = 50mA, f = 50MHz
VCB = 10V, f = 1MHz
VCC = 10V, IC = 1A
IB1 = IB2 = 20mA
ZXT13N50DE6
Document Number: DS33636 Rev. 4 - 2
4 of 7
www.diodes.com
March 2015
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