ZXT13N50DE6_15 Datasheet, PDF (2/7 Pages) Diodes Incorporated – 50V NPN LOW SATURATION SWITCHING TRANSISTOR

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Diodes Incorporated
ZXT13N50DE6
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Base Current
Continuous Collector Current
Peak Pulse Collector Current
Symbol
VCBO
VCEO
VEBO
IB
IC
ICM
Value
100
50
7.5
500
4
10
Unit
V
V
V
mA
A
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Power Dissipation
Linear Derating Factor
(Note 6)
PD
(Note 7)
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
(Note 6)
(Note 7)
(Note 8)
RθJA
RθJL
TJ, TSTG
Value
1.1
8.8
1.7
13.6
113
73
18.6
-55 to +150
Unit
W
mW/°C
°C/W
°C
ESD Ratings (Note 9)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit
JEDEC Class
V
3A
V
C
Notes:
6. For a device mounted with the collector lead on 25mm x 25mm 1oz copper that is on single-sided 1.6mm FR4 PCB; device is measured under still air
conditions whilst operating in a steady-state.
7. Same as Note 6, except the device is measured at t ≤ 5 sec.
8. Thermal resistance from junction to solder-point (at the end of the collector lead).
9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
ZXT13N50DE6
Document Number: DS33636 Rev. 4 - 2
2 of 7
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March 2015
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