ZXT10P20DE6_15 Datasheet, PDF (4/7 Pages) Diodes Incorporated – 20V PNP LOW SATURATION SWITCHING TRANSISTOR IN SOT26

A Product Line of
Diodes Incorporated
ZXT10P20DE6
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 9)
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter Cutoff Current
Collector-Emitter Cutoff Current
ON CHARACTERISTICS (Note 9)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
Output Capacitance
Turn-On Time
Turn-Off Time
Symbol Min
BVCBO
-20
BVCEO
-20
BVEBO
-7
ICBO

IEBO

ICES

300
300
hFE
150
15


VCE(sat)


VBE(sat)

VBE(on)

fT
150
Cobo

t(on)

t(off)

Typ
-65
-53
-8.8
<1
<1
<1
475
450
230
30
-19
-170
-190
-240
-0.97
-0.85
180
21
40
670
Note: 9. Measured under pulsed conditions. Pulse width  300μs. Duty cycle  2%.
Max



-100
-100
-100




-30
-220
-250
-350
-1.05
-0.95

30


Unit
Test Condition
V I_C = -100µA
V I_C = -10mA
V I_E = -100µA
nA V_CB = -15V
nA V_EB = -5V
nA V_CES = -15V
 I_C = -10mA, V_CE = -2V
 I_C = -0.1A, V_CE = -2V
 I_C = -2A, V_CE = -2V
 I_C = -6A, V_CE = -2V
IC = -0.1A, IB = -10mA
mV ^{IC = -1A, IB = -20mA}
IC = -1.5A, IB = -50mA
IC = -2.5A, IB = -150mA
V I_C = -2.5A, I_B = -150mA
V I_C = -2.5A, V_CE = -2V
MHz
pF
ns
ns
VCE = -10V, IC = -50mA, f = 100MHz
VCB = -10V, f = 1MHz
VCC = -10V, IC = -1A
IB1 = -IB2 = -20mA
ZXT10P20DE6
Document Number: DS33625 Rev: 4 - 2
4 of 7
www.diodes.com
May 2015
© Diodes Incorporated