ZXT10P20DE6_15 Datasheet, PDF (2/7 Pages) Diodes Incorporated – 20V PNP LOW SATURATION SWITCHING TRANSISTOR IN SOT26

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Diodes Incorporated
ZXT10P20DE6
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Base Current
Continuous Collector Current
Peak Pulse Collector Current
Symbol
VCBO
VCEO
VEBO
IB
IC
ICM
Value
-20
-20
-7
-500
-2.5
-6
Unit
V
V
V
mA
A
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Power Dissipation
Linear Derating Factor
(Note 5)
PD
(Note 6)
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Leads
Operating and Storage Temperature Range
(Note 5)
(Note 6)
(Note 7)
RθJA
RθJL
TJ, TSTG
Value
1.1
8.8
1.7
13.6
113
73
30.01
-55 to +150
Unit
W
mW/°C
°C/W
°C/W
°C
ESD Ratings (Note 8)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit
JEDEC Class
V
3A
V
C
Notes:
5. For a device mounted with collector leads on 25mm x 25mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air
conditions whilst operating in a steady-state.
6. Same as Note 5, except the device is measured at t  5secs.
7. Thermal resistance from junction to solder-point (at the end of the collector leads).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
ZXT10P20DE6
Document Number: DS33625 Rev: 4 - 2
2 of 7
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May 2015
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