ZXMHC3A01N8 Datasheet, PDF (4/11 Pages) Diodes Incorporated – 30V SO8 Complementary enhancement mode MOSFET H-Bridge

ZXMHC3A01N8
N-channel electrical characteristics (at T_amb = 25°C unless otherwise stated)
Parameter
Symbol Min. Typ. Max. Unit Conditions
Static
Drain-Source breakdown
voltage
Zero Gate voltage Drain
current
Gate-Body leakage
Gate-Source threshold
voltage
Static Drain-Source
on-state resistance ^(a)
Forward
Transconductance ^{(a) (c)}
V_(BR)DSS
30
I_DSS
I_GSS
V_GS(th)
1.0
R_DS(on)
g_fs
V I_D = 250μA, V_GS= 0V
0.5
±100
3.0
0.125
0.180
µA V_DS= 30V, V_GS= 0V
nA _{VGS= ±20V, VDS= 0V}
V I_D= 250μA, V_DS= V_GS
Ω ^{VGS= 10V, ID= 2.5A}
V_GS= 4.5V, I_D= 2.0A
3.5
S V_DS= 15V, I_D= 2.5A
Dynamic
Capacitance ^(c)
Input capacitance
C_iss
190
Output capacitance
C_oss
38
Reverse transfer
capacitance
C_rss
20
Switching ^{(b) (c)}
Turn-on-delay time
t_d(on)
1.7
Rise time
t_r
2.3
Turn-off delay time
t_d(off)
6.6
Fall time
t_f
2.9
Gate charge ^(c)
Total Gate charge
Q_g
3.9
Gate-Source charge
Q_gs
0.6
Gate-Drain charge
Q_gd
0.9
Source–Drain diode
Diode forward voltage ^(a)
V_SD
Reverse recovery time ^(c) t_rr
Reverse recovery charge^(c) Q_rr
0.95
17.7
13.0
NOTES:
(a) Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%.
(b) Switching characteristics are independent of operating junction temperature.
(c) For design aid only, not subject to production testing
pF
pF VDS= 25V, VGS= 0V
f= 1MHz
pF
ns
ns ^{VDD= 15V, VGS= 10V}
ns
I_D= 2.5A
R_G ≅ 6.0Ω,
ns
nC
nC ^{VDS=15V, VGS= 10V}
I_D= 2.5A
nC
V ^IS^{= 1.25A, V}GS^{= 0V}
ns
I_S= 2.5A, di/dt= 100A/μs
nC
Issue 1.0 - March 2009
4
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