ZXMHC3A01N8 Datasheet, PDF (3/11 Pages) Diodes Incorporated – 30V SO8 Complementary enhancement mode MOSFET H-Bridge

Thermal characteristics
ZXMHC3A01N8
10
R
DS(ON)
Limited
1
DC
1s
100m
10m
100ms
Note (a)
10ms
Single Pulse, T =25°C
amb
1ms
100us
1
10
V Drain-Source Voltage (V)
DS
N-channel Safe Operating Area
10
R
DS(ON)
Limited
1
DC
1s
100m
10m
Note (a)
100ms
10ms
1ms
Single Pulse, T =25°C
amb
100us
1
10
-V Drain-Source Voltage (V)
DS
P-channel Safe Operating Area
140 _{One Active Die}
120 ^{25 x 25mm 1oz}
100
80 ^D=0.5
60
40 ^D=0.2
20
0
100µ 1m
Single Pulse
D=0.05
D=0.1
10m 100m 1 10 100 1k
Pulse Width (s)
Transient Thermal Impedance
1.0
Any one
active die
0.5
0.0
0
25 50 75 100 125 150
Temperature (°C)
Derating Curve
100
One Active Die
Single Pulse
T =25°C
amb
10
1
100µ 1m 10m 100m 1 10 100 1k
Pulse Width (s)
Pulse Power Dissipation
Issue 1.0 - March 2009
3
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