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ZABG6002 Datasheet, PDF (4/12 Pages) Diodes Incorporated – LOW POWER 6 STAGE FET LNA AND MIXER BIAS CONTROLLER
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Diodes Incorporated
ZABG6002
Electrical Characteristics (Cont.) Measured at TAMB = 25°C, VCC = 3.3V (Note 1), RCAL1 = RCAL2 = 36K (setting ID1/2/4/5 to
10mA), RCALM = 68K (setting ID3/6 to 5mA) unless otherwise stated
Parameter
Conditions
Drain Characteristics
Drain (D3 and D6, resistor RCALM present)
Current Range
Current Operating
Standard Application
Circuit
Current Disabled (*1)
Voltage Operating
VD = 0, VRCAL = 3.0V,
RCALM not present
ID = 5mA
Symbol Min. Typ. Max. Unit
IDM
IDM(OP)
IDM(DIS)
VDM(OP)
0.5
7.5
mA
4
5
6
mA
10
uA
0.25 0.3 0.35
V
RCAL(1 and 2)
Disable Threshold (*1)
Input Current
VRCAL = 3.0V
VRCAL(DIS)
1.8
2.7 3.0
V
IRCAL(DIS)
1.7 10
uA
RCALM
Disable Threshold (*1)
RCALM Range
RCALM(DIS) 1.5M 3.3M 5.0M
Ω
RCALM
39k
390k
Ω
Voltage and Temperature dependence (RCALM not present)
delta ID vs VCC
VCC = 3.3 to 8.0V
delta ID vs TOP
TOP = -40°C to +85°C
delta VD vs VCC
VCC = 3.3 to 8.0V
delta VD vs TOP
TOP = -40°C to +85°C
dID/dVCC
dID/dTOP
dVD/dVCC
dVD/dTOP
1.2
%/V
0.05
%/°C
0.05
%/V
50
ppm/°C
Output Noise
Drain Voltage
Gate Voltage
CGATE-GND = 10nF,
CDRAIN-GND = 10nF
CGATE-GND = 10nF,
CDRAIN-GND = 10nF
VD(NOISE)
VG(NOISE)
0.02 Vpk-pk
0.005 Vpk-pk
Notes:
1. To disable FET stages 3 and 6, pin RCAL2 must be set to 3V or above and pin RCALM should be open circuit. See applications section for
further information.
2. The characteristics are measured using up to three external reference resistors, RCAL1, RCAL2 and RCALM, wired from pins RCAL1/2/M to ground.
Resistor RCAL1 sets the drain current of FETs 1 and 4. If RCALM is not present, resistor RCAL2 sets the drain currents of FETs 2, 3, 5 and 6. If RCALM
is present, resistor RCAL2 sets the drain currents of FETs 2 and 5 and RCALM sets the drain currents of FETs 3 and 6.
3. The negative bias voltages are generated on-chip using an internal oscillator. Two external capacitors, CNB and CSUB of value 47nF are required for
this purpose.
4. The QFN2044 exposed pad must either be connected to Csub or left open circuit.
5. Noise voltage measurements are made with FETs and gate and drain capacitors of value 10nF in place. Noise voltages are not measured in production.
6. ESD sensitive, handling precautions are recommended.
ZABG6002
Document number: DS32078 Rev. 1 - 2
4 of 12
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May 2010
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