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MMBT3906FA_15 Datasheet, PDF (4/7 Pages) Diodes Incorporated – 40V PNP SMALL SIGNAL TRANSISTOR IN DFN0806 | |||
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MMBT3906FA
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 8)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 8)
DC Current Gain
Symbol Min
BVCBO
-40
BVCEO
-40
BVEBO -6.0
ICEX
ï¾
ICBO
ï
IBL
ï¾
60
80
hFE
100
60
30
Collector-Emitter Saturation Voltage
VCE(sat)
ï¾
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
VBE(sat)
-0.65
ï¾
Cobo
ï¾
Cibo
ï¾
hie
2.0
hre
0.1
hfe
100
hoe
3.0
Current Gain-Bandwidth Product
fT
300
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
td
ï¾
tr
ï¾
ts
ï¾
tf
ï¾
Note:
8. Measured under pulsed conditions. Pulse width ï£ 300µs. Duty cycle ï£ 2%.
Max
ï¾
ï¾
ï¾
-50
-50
-50
ï¾
ï¾
300
ï¾
ï¾
-0.25
-0.40
-0.85
-0.95
4.5
10
12
10
400
60
ï¾
35
35
225
75
Unit
Test Condition
V IC = -10µA, IE = 0
V IC = -1.0mA, IB = 0
V IE = -10µA, IC = 0
nA VCE = -30V, VEB(OFF) = -3.0V
nA VCB = -30V, IE = 0
nA VCE = -30V, VEB(OFF) = -3.0V
IC = -100µA, VCE = -1.0V
IC = -1.0mA, VCE = -1.0V
ï¾ IC = -10mA, VCE = -1.0V
IC = -50mA, VCE = -1.0V
IC = -100mA, VCE = -1.0V
V IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
V IC = -10mA, IB = -1.0mA
IC =- 50mA, IB = -5.0mA
pF
pF
kï
x 10-4
ï¾
µS
MHz
VCB = -5.0V, f = 1.0MHz, IE = 0
VEB = -0.5V, f = 1.0MHz, IC = 0
VCE = -10V, IC = -1.0mA,
f = 1.0kHz
VCE = -20V, IC = -10mA,
f = 100MHz
ns VCC = -3.0V, IC = -10mA,
ns VBE(off) = 0.5V, IB1 = -1.0mA
ns VCC = -3.0V, IC = -10mA,
ns IB1 = IB2 = -1.0mA
MMBT3906FA
Document number: DS36017 Rev. 1 - 2
4 of 7
www.diodes.com
July 2013
© Diodes Incorporated
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