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MMBT3906FA_15 Datasheet, PDF (2/7 Pages) Diodes Incorporated – 40V PNP SMALL SIGNAL TRANSISTOR IN DFN0806 | |||
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Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Collector Current
Symbol
VCBO
VCEO
VEBO
IC
ICM
MMBT3906FA
Value
Unit
-40
V
-40
V
-6.0
V
-200
mA
-500
mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Lead (Note 6)
Operating and Storage and Temperature Range
Symbol
PD
Rï±JA
Rï±JL
TJ, TSTG
Value
435
287
150
-55 to +150
Unit
mW
ï°C/W
ï°C/Wï
ï°C
ESD Ratings (Note 7)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Symbol
ESD HBM
ESD MM
Value
4,000
200
Unit JEDEC Class
V
3A
V
B
Notes:
5. For the device mounted on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured
under still air conditions whilst operating in steady state condition. The entire exposed collector pad is attached to the heatsink.
6. Thermal resistance from junction to solder-point (on the exposed collector pad).
7. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
MMBT3906FA
Document number: DS36017 Rev. 1 - 2
2 of 7
www.diodes.com
July 2013
© Diodes Incorporated
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