FZT968_16 Datasheet, PDF (4/7 Pages) Diodes Incorporated – 12V PNP HIGH CURRENT LOW SATURATION POWER TRANSISTOR

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Collector-Base Breakdown Voltage
BVCBO
-15
Collector-Emitter Breakdown Voltage (Note 10) BV_CEO
-12
Emitter-Base Breakdown Voltage
BVEBO
-6
Collector Cutoff Current
—
ICBO
—
Emitter Cutoff Current
IEBO
—
300
300
DC Current Transfer Static Ratio (Note 10)
hFE
200
150
—
—
Collector-Emitter Saturation Voltage (Note 10)
VCE(sat)
—
—
Base-Emitter Saturation Voltage (Note 10)
Base-Emitter Turn-on Voltage (Note 10)
VBE(sat)
—
VBE(on)
—
Typ
-28
-20
-8
<1
—
<1
450
450
300
240
50
-65
-132
-360
-1.05
-0.87
Transitional Frequency (Note 10)
fT
—
80
Output capacitance
Switching Time
Cobo
—
161
tON
—
120
tOFF
—
116
Note:
10. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤ 2%.
Max
—
—
—
-10
-1
-10
—
1,000
—
—
—
-130
-170
-450
-1.2
-1.05
—
—
—
—
FZT968
Unit
V
V
V
nA
µA
nA
—
mV
V
V
MHz
pF
ns
Test Condition
IC = -100µA
IC = -10mA
IE = -100µA
VCB = -12V
VCB = -12V, TA = +100°C
VEB = -6V
IC = -10mA, VCE = -1V
IC = -500mA, VCE = -1V
IC = -5A, VCE = -1V
IC = -10A, VCE = -1V
IC = -20A, VCE = -1V
IC = -500mA, IB = -5mA
IC = -2A, IB = -50mA
IC = -6A, IB = -250mA
IC = -6A, IB = -250mA
IC = -6A, VCE = -1V
IC = -100mA, VCE = -10V,
f = 50MHz
VCB = -20V, f = 1MHz
VCC = -10V, IC = -4A,
IB1 = -IB2 = -400mA
FZT968
Datasheet Number: DS33180 Rev. 4 - 2
4 of 7
www.diodes.com
October 2015
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