FZT968_16 Datasheet, PDF (3/7 Pages) Diodes Incorporated – 12V PNP HIGH CURRENT LOW SATURATION POWER TRANSISTOR

Thermal Characteristics and Derating Information
FZT968
10 V
CE(sat)
Limit
1
DC
1s
100m
100ms
10ms
Single Pulse. T =25°C
amb
1ms
52mmX52mm
single sided 2oz Cu
10m
100µs
100m
1
10
100
-V Collector-Emitter Voltage (V)
CE
Safe Operating Area
3.0
2.5
52mmX52mm
single sided 2 oz Cu
2.0
1.5
1.0
0.5 ^{2 5 m m X 2 5 m m}
single sided 1 oz Cu
0.0
0 20 40 60 80 100 120 140 160
Temperature (°C)
Derating Curve
40 ^{5 2 m m X 5 2 m m}
single sided 2 oz Cu
30
D=0.5
20
D=0.2
10
Single Pulse
D=0.05
D=0.1
0
100µ 1m 10m 100m 1 10 100 1k
Pulse Width (s)
Transient Thermal Impedance
Single Pulse. T =25°C
amb
100
52mmX52mm
single sided 2oz Cu
10
1
100µ 1m 10m 100m 1
10 100 1k
Pulse Width (s)
Pulse Power Dissipation
FZT968
Datasheet Number: DS33180 Rev. 4 - 2
3 of 7
www.diodes.com
October 2015
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