FZT749_15 Datasheet, PDF (4/7 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

A Product Line of
Diodes Incorporated
FZT749
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Collector-Base Breakdown Voltage
BVCBO
-35
Collector-Emitter Breakdown Voltage (Note 12)
BVCEO
-25
Emitter-Base Breakdown Voltage
BVEBO
-7
Collector Cut-Off Current
—
ICBO
—
Emitter Cut-Off Current
IEBO
—
—
Collector-Emitter Saturation Voltage (Note 12)
VCE(SAT)
—
Base-Emitter Saturation Voltage (Note 12)
VCE(SAT)
—
Base-Emitter Turn-On Voltage (Note 12)
VBE(ON)
—
70
DC Current Gain (Note 12)
100
hFE
75
15
Typ
—
—
—
<1
—
<1
-0.12
-0.40
-0.9
-0.8
200
200
570
50
Current Gain-Bandwidth Product (Note 12)
fT
100
160
Turn-On Time
Turn-Off Time
Output Capacitance
ton
—
40
toff
—
450
Cobo
—
55
Note:
12. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
Max
—
—
—
-100
-10
-100
-0.3
-0.6
-1.25
-1.0
—
300
—
—
—
—
—
100
Unit
V
V
V
nA
µA
nA
V
V
V
—
MHz
ns
ns
pF
Test Condition
IC = -100µA
IC = -10mA
IE = -100µA
VCB = -30V
VCB = -30V, TAMB = +100°C
VEB = -5.6V
IC = -1A, IB = -100mA
IC = -3A, IB = -300mA
IC = -1A, IB = -100mA
IC = -1A, VCE = -2V
IC = -50mA, VCE = -2V
IC = -1A, VCE = -2V
IC = -2A, VCE = -2V
IC = -6A, VCE = -2V
VCE = -5V, IC = -100mA
f = 100MHz
VCC = -10V, IC = -500mA
IB1 = IB2 = -50mA
VCB = -10V, f = 1MHz
FZT749
Document Number DS33162 Rev. 6 - 2
4 of 7
www.diodes.com
June 2015
© Diodes Incorporated