FZT749_15 Datasheet, PDF (2/7 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Symbol
VCBO
VCEO
VEBO
IC
ICM
A Product Line of
Diodes Incorporated
Value
-35
-25
-7
-3
-8
FZT749
Unit
V
V
V
A
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Power Dissipation
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance Junction to Lead
Operating and Storage Temperature Range
(Note 6)
(Note 7)
(Note 8)
(Note 9)
(Note 6)
(Note 7)
(Note 8)
(Note 9)
(Note 10)
Symbol
PD
R_JA
R_JL
TJ, TSTG
Value
3.0
2.0
1.6
1.2
41.7
62.5
78.1
104
12.9
-55 to +150
Unit
W
°C/W
°C
ESD Ratings (Note 9)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit JEDEC Class
V
3A
V
C
Notes:
6. For a device mounted with the collector lead on 50mm x 50mm 2oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under
still air conditions whilst operating in a steady-state.
7. Same as Note 6, except the device is mounted on 25mm x 25mm 2oz copper.
8. Same as Note 6, except the device is mounted on 25mm x 25mm 1oz copper.
9. Same as Note 6, except the device is mounted on minimum recommended pad layout.
10. Thermal resistance from junction to solder-point (at the end of the collector lead).
11. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
FZT749
Document Number DS33162 Rev. 6 - 2
2 of 7
www.diodes.com
June 2015
© Diodes Incorporated