FZT717 Datasheet, PDF (4/6 Pages) Zetex Semiconductors – SOT223 PNP medium power transistor

FZT717
Electrical characteristics (at T_amb = 25°C unless otherwise stated)
Parameter
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage
Emitter-base breakdown
voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation
voltage
Symbol
BV_CBO
BV_CEO
BV_EBO
I_CBO
I_EBO
V_CE(sat)
Base-emitter saturation
voltage
V_BE(sat)
Base-emitter turn-on voltage V_BE(on)
Static forward current transfer h_FE
ratio
Transition frequency
Output capacitance
Switching times
f_T
C_OBO
t_on
t_off
Min.
-12
-12
-5
300
300
160
60
45
80
Typ. Max. Unit Conditions
V I_C = 100µA
V I_C = 10mA
V I_E = 100µA
-100
-100
-20
-150
-320
-1050
nA V_CB = -10V
nA V_EB = -4V
mV _{IC =-0.1A, IB =-10mA} ^(*)
I_C =-1A, I_B =-10mA^(*)
I_C =-3A, I_B =-50mA^(*)
mV _{IC =-3A, IB =-50mA}^(*)
-1000 mV _{IC =-3A, VCE =-2V}^(*)
I_C =-10mA, V_CE =-2V^(*)
I_C =-100mA, V_CE =-2V^(*)
I_C =-3A, V_CE =-2V^(*)
I_C =-8A, V_CE =-2V^(*)
I_C =-10A, V_CE =-2V^(*)
110
MHz I_C =-50mA, V_CE =-10V
f = 100MHz
21
30
pF V_CB =-10V, f = 1MHz
70
ns V_CC =-6V, I_C =-2A
130
ns I_B1 = I_B2 =50mA
NOTES:
(*) Measured under pulsed conditions. Pulse width = 300µs. Duty cycle Յ2%
Issue 2 - September 2006
4
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