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FZT717 Datasheet, PDF (2/6 Pages) Zetex Semiconductors – SOT223 PNP medium power transistor
FZT717
Absolute maximum ratings
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Peak pulse current
Continuous collector current(a)
Base current
Power dissipation at Tamb =25°C(a)
Linear derating factor
Operating and storage temperature range
Symbol
BVCBO
BVCEO
BVEBO
ICM
IC
IB
PD
Limit
-12
-12
-5
-10
-3
-500
2
Unit
V
V
V
A
A
mA
W
Tj, Tstg -55 to +150
°C
Thermal resistance
Parameter
Junction to ambient
Symbol
R⍜JA
Limit
62.5
Unit
°C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper in still air
conditions.
Issue 2 - September 2006
2
© Zetex Semiconductors plc 2006
www.zetex.com