FMMTL717_15 Datasheet, PDF (4/7 Pages) Diodes Incorporated – 12V PNP HIGH GAIN MEDIUM POWER TRANSISTOR IN SOT23

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Diodes Incorporated
FMMTL717
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 9)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector Emitter Cutoff Current
Static Forward Current Transfer Ratio (Note 9)
Collector-Emitter Saturation Voltage (Note 9)
Base-Emitter Turn-On Voltage(Note 9)
Base-Emitter Saturation Voltage(Note 9)
Output Capacitance
Symbol
Min
BVCBO
-12
BVCEO
-12
BVEBO
-7
ICBO
-
IEBO
-
ICES
-
300
300
hFE
180
100
50
-
-
VCE(sat)
-
-
VBE(on)
-
VBE(sat)
-
Cobo
-
Transition Frequency
fT
-
Turn-On Time
Turn-Off Time
ton
-
toff
-
Notes: 9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%
Typ
-35
-25
-8.5
<-1
<-1
<-1
490
450
275
180
110
-24
-94
-160
-200
-875
-970
15
205
76
149
Max
-
-
-
-10
-10
-10
-
-
-
-
-
-40
-140
-240
-290
-1000
-1100
20
-
-
-
Unit
V
V
V
nA
nA
nA
-
mV
mV
mV
mV
mV
mV
pF
MHz
ns
ns
Test Condition
IC = -100µA
IC = -10mA
IE = -100µA
VCB = -10V
VEB = -5.6V
VCE= -10V
IC = -10mA, VCE = -2V
IC = -0.1A, VCE = -2V
IC = -1A, VCE = -2V
IC = -2A, VCE = -2V
IC = -3A, VCE = -2V
IC =- 0.1A, IB = -10mA
IC =- 0.5A, IB = -20mA
IC = -1A, IB = -50mA
IC = -1.25A, IB = -50mA
IC = -1.25A, VCE = -2V
IC = -1.25A, IB = -50mA
VCB = -10V, f = 1MHz
VCE = -10V, IC = -50mA,
f = 100MHz
VCC = -10V, IC = -1A
IB1 = -IB2 = -10mA
FMMTL717
Document Number: DS33131 Rev. 2 - 2
4 of 7
www.diodes.com
July 2014
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