FMMTL717_15 Datasheet, PDF (2/7 Pages) Diodes Incorporated – 12V PNP HIGH GAIN MEDIUM POWER TRANSISTOR IN SOT23

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Diodes Incorporated
FMMTL717
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Base Current
Symbol
VCBO
VCEO
VEBO
IC
ICM
IB
Value
-12
-12
-7
-1.25
-4
-200
Unit
V
V
V
A
A
mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
(Note 6)
(Note 6)
(Note 7)
Symbol
PD
RθJA
RθJL
TJ, TSTG
Value
500
250
197
-55 to +150
Unit
mW
°C/W
°C/W
°C
ESD Ratings (Note 8)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit JEDEC Class
V
3A
V
C
Notes:
6. For a device mounted with the collector lead on 15mm x 15mm 1oz copper that is on a single-sided FR4 PCB; device is measured under still air
conditions whilst operating in a steady-state.
7. Thermal resistance from junction to solder-point (at the end of the collector lead).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
FMMTL717
Document Number: DS33131 Rev. 2 - 2
2 of 7
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July 2014
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