FMMTL619_15 Datasheet, PDF (4/7 Pages) Diodes Incorporated – 50V NPN LOW SATURATION TRANSISTOR IN SOT23

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Diodes Incorporated
FMMTL619
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 9)
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector Emitter Cut-Off Current
ON CHARACTERISTICS (Note 9)
Static Forward Current Transfer Ratio
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
ICES
hFE
Min Typ
100 210
50
70
7
8.5
-
-
-
-
-
-
200 400
300 450
200 400
100 230
30
50
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
SMALL SIGNAL CHARACTERISTICS
VCE(sat)
VBE(sat)
VBE(on)
-
24
-
60
-
100
-
195
-
1020
-
895
Transition Frequency
fT
-
180
Collector Output Capacitance
Turn-On Time
Turn-Off Time
Cobo
t(on)
t(off)
-
6
-
182
-
379
Note:
9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
Max
-
-
-
10
10
10
-
-
-
-
-
45
100
180
330
1100
1000
-
8
-
-
Unit
Test Condition
V I_C = 100µA
V
IC = 5mA
V I_E = 100µA
nA V_CB = 80V
nA V_EB = 6V
nA V_CES = 50V
IC = 10mA, VCE = 5V
IC = 200mA, VCE = 5V
-
IC = 500mA, VCE = 5V
IC = 1A, VCE = 5V
IC = 2A, VCE = 5V
IC = 100mA, IB = 10mA
mV ^{IC = 250mA, IB = 10mA}
IC = 500mA, IB = 25mA
IC = 1.25, IB = 125mA
mV I_C = 1.25A, I_B = 125mA
mV I_C = 1.25A, V_CE = 2V
MHz
pF
ns
ns
IC = 50mA, VCE = 10V,
f = 100MHz
VCB = 10V, f = 1MHz
VCC = 10V, IC = 1A,
IB1 = -IB2 = 10mA
FMMTL619
Document number: DS33130 Rev. 3 - 2
4 of 7
www.diodes.com
April 2015
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