FMMTL619_15 Datasheet, PDF (2/7 Pages) Diodes Incorporated – 50V NPN LOW SATURATION TRANSISTOR IN SOT23

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Diodes Incorporated
FMMTL619
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Base Current
Symbol
VCBO
VCEO
VEBO
IC
ICM
IB
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation (Note 5)
Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Lead (Note 7)
Operating and Storage Temperature Range
Symbol
PD
PD
R_JA
RθJA
R_JL
TJ, TSTG
Value
100
50
7
1.25
2
200
Value
500
675
250
185
197
-55 to +150
Unit
V
V
V
A
A
mA
Unit
mW
mW
°C/W
°C/W
°C/W
°C
ESD Ratings (Note 8)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit JEDEC Class
V
3A
V
C
Notes:
5. For a device mounted with the collector lead on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air
conditions whilst operating in a steady-state.
6. Same as Note 5, except the device is measured at t ≤ 5 seconds.
7. Thermal resistance from junction to solder-point (at the end of the collector lead).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
FMMTL619
Document number: DS33130 Rev. 3 - 2
2 of 7
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April 2015
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