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FMMT620_15 Datasheet, PDF (4/7 Pages) Diodes Incorporated – 80V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23
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FMMT620
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 9)
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
Collector Emitter Cut-off Current
Static Forward Current Transfer Ratio (Note 9)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
ICES
hFE
Min Typ
100 180
80
110
7
8
-
-
-
-
-
-
200 450
300 450
110 170
60
90
20
30
-
10
Collector-Emitter Saturation Voltage (Note 9)
-
VCE(sat)
-
-
-
Base-Emitter Saturation Voltage (Note 9)
Base-Emitter Saturation Voltage (Note 9)
VBE(sat)
-
VBE(on)
-
Transition Frequency
fT
100
Collector Output Capacitance
Turn-On Time
Turn-Off Time
Cobo
-
t(on)
-
t(off)
-
Notes: 9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%
15
45
145
160
0.86
0.82
160
11.5
86
1128
Max
-
-
-
100
100
100
-
900
-
-
-
-
20
60
185
200
1.0
0.95
-
18
-
-
Unit
V
V
V
nA
nA
nA
-
mV
V
V
MHz
pF
ns
ns
Test Condition
IC = 100µA
IC = 1mA
IE = 100µA
VCB = 80V
VEB = 6.0V
VCES = 80V
IC = 10mA, VCE = 2V
IC = 200mA, VCE = 2V
IC = 1A, VCE = 2V
IC = 1.5A, VCE = 2V
IC = 3A, VCE = 2V
IC = 5A, VCE = 2V
IC = 0.1A, IB = 10mA
IC = 0.5A, IB = 50mA
IC = 1A, IB = 20mA
IC = 1.5A, IB = 20mA
IC = 1.5A, IB = 50mA
IC = 1.5A, VCE = 2V
IC = 50mA, VCE = 10V,
f = 100MHz
VCB = 10V, f = 1MHz
VCC = 10V, IC = 500mA,
IB1 = -IB2 = 25mA
FMMT620
Document number: DS33113 Rev. 3 - 2
4 of 7
www.diodes.com
September 2012
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