FMMT620_15 Datasheet, PDF (3/7 Pages) Diodes Incorporated – 80V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23

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Diodes Incorporated
FMMT620
Thermal Characteristics and Derating information
10
V
CE(sat)
Limited
1
100m
DC
1s
100ms
10m
Single Pulse
T =25°C
amb
10ms
1ms
100µs
1m
100m
1
10
100
V Collector-Emitter Voltage (V)
CE
Safe Operating Area
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0 25 50 75 100 125 150 175
Temperature (°C)
Derating Curve
220
200
T =25°C
amb
180
160
140
120 _D=0.5
100
80
60 _D=0.2
40
D=0.1
D=0.05
20
Single Pulse
0
100µ 1m 10m 100m 1 10 100 1k
Pulse Width (s)
Transient Thermal Impedance
100
Single Pulse
T =25°C
amb
10
1
0.1
100µ 1m 10m 100m 1 10 100 1k
Pulse Width (s)
Pulse Power Dissipation
FMMT620
Document number: DS33113 Rev. 3 - 2
3 of 7
www.diodes.com
September 2012
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