DT452P Datasheet, PDF (4/4 Pages) Diodes Incorporated – P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

30
10
LIMIT
R ^DS(ON)
1.0
100
1ms
s
10ms
100ms
1s
10s
dc
0.1
V_GS = -10V
SINGLE PULSE
R_qJA = 42 C
T_A = 25 C
0.01
0.1
1.0
10
50
F-Vig^D.^S5,,DMRaAxINim-SumOUSRaCfeEOVpOerLaTtAinGgEA(rVea)
1.0
D = 0.5
0.1
0.01
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.001
0.0001
0.001
R_QJA (t) = r(t) b R_QJA
R_QJA = See Note 1c
P_(pk)
t₁
t₂
T_J - T_A = P_PK b R_QJA(t)
Duty Cycle, D = t₁/t₂
0.01
0.1
1.0
10
100
t₁, SQUARE WAVE PULSE DURATION (seconds)
Fig. 6, Typical Normalized Transient Thermal Impedance Curves
Remark: Thermal characterization performed under conditions
described in note 1c. Transient thermal response will change
depending on the circuit board design.
1000 3000
DS11612 Rev. C-4
4 of 4
DT452P