DT452P Datasheet, PDF (2/4 Pages) Diodes Incorporated – P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Electrical Characteristics^{25°C unless otherwise specified}
Characteristic
Symbol
Min
Typ
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV_DSS
30
—
Zero Gate Voltage Drain Current
T_j = 55°C
I_DSS
—
—
Gate-Body Leakage, Forward
I_GSSF
—
Gate-Body Leakage, Reverse
I_GSSR
—
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
T_j = 125°C
V_GS(th)
-1.0
-0.7
Static Drain-Source On-Resistance
T_j = 125°C
R_{DS (ON)}
—
—
—
1.6
1.2
0.030
0.042
0.042
0.058
On-State Drain Current
I_D(ON)
25
15
—
Forward Transconductance
DYNAMIC CHARACTERISTICS
g_FS
—
11
Input Capacitance
C_ISS
—
720
Output Capacitance
C_OSS
—
370
Reverse Transfer Capacitance
C_RSS
—
250
SWITCHING CHARACTERISTICS (Note 2)
Turn-On Delay Time
t_D(ON)
—
12
Turn-On Rise Time
t_r
—
13
Turn-Off Delay Time
t_D(OFF)
—
29
Turn-Off Fall Time
t_f
—
10
Total Gate Charge
Q_g
—
19
Gate-Source Charge
Q_gs
—
2.3
Gate-Drain Charge
Q_gd
—
5.5
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Max Continuous Drain-Source Diode
Forward Current
I_S
—
—
Drain-Source Diode Forward Voltage
V_SD
—
0.9
Notes: 2. Pulse Test: Pulse width l 300µs, duty cycle l 2.0%.
Max
—
1.0
10
100
-100
3.0
2.2
0.035
0.070
0.055
0.100
—
—
—
—
—
20
30
50
20
30
—
—
2.3
1.3
Unit
V
µA
nA
nA
Test Condition
VGS = 0V, ID = 250µA
VDS = 24V, V_GS = 0V
VGS = 20V, VDS = 0V
VGS = 20V, VDS = 0V
V
VDS = VGS, ID = 250µA
W
VGS = 10V, ID = 7.2A
V_GS = 4.5V, I_D = 6.0A
A
VGS = 10V, VDS = 5.0V
V_GS = 4.5V, V_DS = 5.0V
m
VDS = 10V, ID = 7.2A
pF
pF
V_DS = 15V, V_GS = 0V
f = 1.0MHz
pF
ns
ns
V_DD = 10V, I_D = 1.0A
ns
V_GEN = 10V, R_GEN = 6.0W
ns
nC
nC
V_DS = 10V, I_D = 3.0A.
V_GS = 10V
nC
A
V
VGS = 0V, IS = 7.2A (Note 2)
DS11612 Rev. C-4
2 of 4
DT452P