DT014L Datasheet, PDF (4/4 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

40
10
10
s
LIMIT
R ^DS(ON)
100
s
10 _ms
1
100 _ms
101ss
dc
0.1
0.01
V_GS = 4.5 V
SINGLE PULSE
R_qJA = See Note 1c
T_A = 25 C
0.1
1
10
100
FVig^D.^S5, ,DRMAaIxNim-SuOmUSRaCfeEOVpOeLrTaAtinGgEA(rVe)a
1.0
D = 0.5
0.1
0.01
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.001
0.0001
0.001
R_QJA (t) = r(t) b R_QJA
R_QJA = See Note 1c
P_(pk)
t₁
t₂
T_J - T_A = P_PK b R_QJA(t)
Duty Cycle, D = t₁/t₂
0.01
0.1
1.0
10
100
t₁, SQUARE WAVE PULSE DURATION (seconds)
Fig. 6, Typical Normalized Transient Thermal Impedance Curves
Remark: Thermal characterization performed under conditions
described in note 1c. Transient thermal response will change
depending on the circuit board design.
1000 3000
DS11603 Rev. C-4
4 of 4
DT014L