DT014L Datasheet, PDF (2/4 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Electrical Characteristics^{25°C unless otherwise specified}
Characteristic
Symbol
Min
Typ
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV_DSS
60
—
Zero Gate Voltage Drain Current
T_j =55°C
I_DSS
—
—
Gate-Body Leakage, Forward
IGSSF
—
—
Gate-Body Leakage, Reverse
I_GSSR
—
—
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
T_j = 125°C
VGS(th)
1.0
0.8
1.5
1.2
Static Drain-Source On-Resistance
0.17
RDS (ON)
—
0.25
Tj = 125°C
0.12
On-State Drain Current
I_D(ON)
5.0
10
—
Forward Transconductance
g_FS
—
4.0
DYNAMIC CHARACTERISTICS
Input Capacitance
C_ISS
—
214
Output Capacitance
C_OSS
—
70
Reverse Transfer Capacitance
C_RSS
—
27
SWITCHING CHARACTERISTICS (Note 2)
Turn-On Delay Time
tD(ON)
—
6.0
Turn-On Rise Time
t_r
—
14
Turn-Off Delay Time
t_D(OFF)
—
15
Turn-Off Fall Time
t_f
—
10
Total Gate Charge
Q_g
—
3.6
Gate-Source Charge
Q_gs
—
0.8
Gate-Drain Charge
Q_gd
—
1.4
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Max Continuous Drain-Source Diode
Forward Current
I_S
—
—
Drain-Source Diode Forward Voltage
(Note 2)
V_SD
—
0.85
Reverse Recovery Time
t_rr
—
—
Notes: 2. Pulse Test: Pulse width l 300µs, duty cycle l 2.0%.
Max
—
25
250
100
-100
3.0
2.0
0.2
0.36
0.16
—
—
—
—
—
12
25
28
18
5.0
—
—
2.3
1.3
140
Unit
V
µA
nA
nA
Test Condition
V_GS = 0V, I_D = 250µA
VDS = 60V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
V
V_DS = V_GS, I_D = 250µA
VGS = 4.5V, ID = 2.6A
W
V_GS = 4.5V, I_D = 2.6A
V_GS = 10V, I_D = 3.4A
A
VGS = 4.5, VDS = 5.0V
VGS = 10V, VDS = 5.0V
m
VGS = 5.0V, ID = 2.6A
pF
pF
VDS = 30V, VGS = 0V
f = 1.0MHz
pF
ns
ns
V_DD = 30V, I_D = 3.0A
ns
V_GEN = 10V, R_GEN = 12W
ns
nC
nC
V_DS = 10V, I_D = 2.6A.
V_GS = 4.5V
nC
A
V
VGS = 0V, IS = 2.3A
ns
VGS = 0V, IF = 2.3A,
dl_F / dt = 100 A/µs
DS11603 Rev. C-4
2 of 4
DT014L