DSS8110Y Datasheet, PDF (4/5 Pages) Diodes Incorporated – 100V LOW VCE(sat) NPN SURFACE MOUNT TRANSISTOR

1
I_C/I_B = 10
0.1
T_A = 150°C
T_A = 125°C
T_A = 85°C
T_A = 25°C
T_A = -55°C
0.01
0.0001 0.001 0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Fig. 6 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
1.2
I_C/I_B = 10
1.0
0.8
T_A = -55°C
0.6
T_A = 25°C
0.4
0.2
T_A = 150°C
T_A = 85°C
T_A = 125°C
0
0.1
1
10
100
1,000
I_C, COLLECTOR CURRENT (mA)
Fig. 8 Typical Base-Emitter Saturation Voltage
vs. Collector Current
Package Outline Dimensions
A
BC
H
K
M
J
DF
L
1.2
V_CE = 10V
1.0
DSS8110Y
0.8
T_A = -55°C
0.6
T_A = 25°C
0.4
T_A = 85°C
T_A = 125°C
0.2
T_A = 150°C
0
0.0001 0.001 0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Fig. 7 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
SOT-363
Dim Min Max
A
0.10 0.30
B
1.15 1.35
C
2.00 2.20
D
0.65 Typ
F
0.40 0.45
H
1.80 2.20
J
0
0.10
K
0.90 1.00
L
0.25 0.40
M
0.10 0.22
α
0°
8°
All Dimensions in mm
DSS8110Y
Document number: DS31679 Rev. 2 - 2
4 of 5
www.diodes.com
October 2010
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