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| DSS8110Y Datasheet, PDF (2/5 Pages) Diodes Incorporated – 100V LOW VCE(sat) NPN SURFACE MOUNT TRANSISTOR | |||
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DSS8110Y
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Peak Pulse Collector Current
Base Current â Continuous
Symbol
VCBO
VCEO
VEBO
IC
ICM
IB
Value
120
100
5
1
3
0.3
Unit
V
V
V
A
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 4) @ TA = 25°C
Thermal Resistance, Junction to Ambient (Note 4) @ TA = 25°C
Operating and Storage Temperature Range
Notes:
4. Device mounted on FR-4 PCB, with minimum recommended pad layout.
Symbol
PD
RθJA
TJ, TSTG
Value
625
200
-55 to +150
Unit
mW
°C/W
°C
0.7
10
Pw = 100µs
0.6
1
0.5
DC
0.4
Pw = 100ms
0.1
Pw = 10ms
0.3
Pw = 1ms
0.2
0.1
RθJA = 200°C/W
0
0
50
100
150
200
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs. Ambient Temperature
1
D = 0.7
D = 0.5
D = 0.3
0.01
0.001
0.1
1
10
100
1,000
VCE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage
0.1 D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
D = Single Pulse
0.001
0.00001 0.0001
D = 0.9
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (s)
Fig. 3 Transient Thermal Response
RθJA(t) = r(t) * RθJA
RθJA = 180°C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1/t2
10
100
1,000
DSS8110Y
Document number: DS31679 Rev. 2 - 2
2 of 5
www.diodes.com
October 2010
© Diodes Incorporated
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