DSS5540X Datasheet, PDF (4/5 Pages) Diodes Incorporated – 40V LOW VCE(sat) PNP SURFACE MOUNT TRANSISTOR

1
I_C/I_B = 10
0.1
0.01
T_A = 150°C
T_A = 125°C
T_A = 85°C
T_A = -55°C
T_A = 25°C
0.001
0.0001 0.001 0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Fig. 5 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
1.2
1.0
I_C/I_B = 10
0.8
T_A = -55°C
0.6
T_A = 25°C
0.4
T_A = 85°C
T_A = 125°C
0.2
T_A = 150°C
0
0.0001 0.001 0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Fig. 7 Typical Base-Emitter Saturation Voltage
vs. Collector Current
DSS5540X
1.0
V_CE = -2V
0.8
T_A = -55°C
0.6
T_A = 25°C
0.4
T_A = 85°C
0.2
T_A = 125°C
T_A = 150°C
0
0.0001 0.001 0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Fig. 6 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
1,000
f = 1MHz
100
C_ibo
C_obo
10
0.1
1
10
100
V_R, REVERSE VOLTAGE (V)
Fig. 8 Typical Capacitance Characteristics
Package Outline Dimensions
D1
R0.200
E
B
L
B1
8° _(4X)
e
e1
A
D
C
H
SOT89
Dim Min
Max
A
1.40
1.60
B
0.44
0.62
B1 0.35
0.54
C
0.35
0.43
D
4.40
4.60
D1 1.52
1.83
E
2.29
2.60
e
1.50 Typ
e1
3.00 Typ
H
3.94
4.25
L
0.89
1.20
All Dimensions in mm
DSS5540X
Document number: DS31653 Rev. 2 - 2
4 of 5
www.diodes.com
October 2010
© Diodes Incorporated