DSS5540X Datasheet, PDF (2/5 Pages) Diodes Incorporated – 40V LOW VCE(sat) PNP SURFACE MOUNT TRANSISTOR

DSS5540X
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Collector Current
Repetitive Peak Pulse Collector Current (Note 4)
Continuous Collector Current
Peak Pulse Base Current
Continuous Base Current
Symbol
V_CBO
V_CEO
V_EBO
I_CM
I_CRP
I_C
I_BM
I_B
Thermal Characteristics
Characteristic
Power Dissipation (Note 5) @ T_A = 25°C
Thermal Resistance, Junction to Ambient Air (Note 5) @ T_A = 25°C
Power Dissipation (Note 6) @ T_A = 25°C
Thermal Resistance, Junction to Ambient Air (Note 6) @ T_A = 25°C
Operating and Storage Temperature Range
Notes:
4. Pulse width ≤ 10ms; Duty cycle ≤ 0.2
5. Device mounted on FR-4 PCB with minimum recommended pad layout.
6. Device mounted on FR-4 PCB with 1inch² copper pad layout.
Symbol
P_D
R_θJA
P_D
R_θJA
T_J, T_STG
2.4
2.0
Value
-40
-40
-6
-10
-5
-4
-2
-1
Value
0.9
139
2
62.5
-55 to +150
Unit
V
V
V
A
A
A
A
A
Unit
W
°C/W
W
°C/W
°C
1.6
1.2
Note 6
0.8
Note 5
0.4
0
0
50
100
150
200
T_A, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs. Ambient Temperature
1
D = 0.7
D = 0.5
D = 0.3
0.1 _{D = 0.1}
D = 0.05
D = 0.9
D = 0.02
0.01
D = 0.01
D = 0.005
D = Single Pulse
0.001
0.00001 0.0001
0.001
DSS5540X
Document number: DS31653 Rev. 2 - 2
0.01
0.1
1
10
t₁, PULSE DURATION TIME (s)
Fig. 2 Transient Thermal Response
2 of 5
www.diodes.com
R_θJA(t) = r(t) * R_θJA
R_θJA = 135°C/W
P(pk)
t₁
t₂
T_J - T_A = P * R_θJA(t)
Duty Cycle, D = t₁/t₂
100
1,000 10,000
October 2010
© Diodes Incorporated