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DSS5160FDB Datasheet, PDF (4/7 Pages) Diodes Incorporated – DUAL PNP LOW VCE TRANSISTOR | |||
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DSS5160FDB
Electrical Characteristics â Q1 & Q2 (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 11)
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
DC Current Gain (Note 11)
Collector-Emitter Saturation Voltage (Note 11)
Equivalent On-Resistance (Note 11)
Base-Emitter Saturation Voltage (Note 11)
Base-Emitter Turn-on Voltage (Note 11)
Transition Frequency
Symbol Min
BVCBO
-60
BVCEO
-60
BVEBO
-7
ï¾ï
ICBO
ï¾
IEBO
ï¾
170
hFE
120
70
ï¾ï
VCE(sat)
ï¾ï
ï¾ï
RCE(sat)
ï¾
ï¾
VBE(sat)
ï¾
ï¾
VBE(on)
ï¾
fT
65
Typ
Max
ï¾ï
ï¾
ï¾
ï¾
ï¾ï
ï¾
ï¾ï
-100
ï¾
-50
ï¾
-100
ï¾ï
ï¾ï
ï¾ï
ï¾ï
ï¾ï
ï¾ï
ï¾
-180
ï¾
-340
ï¾
-550
ï¾
360
ï¾ï
-1
ï¾ï
-1.0
ï¾ï
-1.1
ï¾ï
-0.9
ï¾
ï¾
Output Capacitance
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
Cobo
ï¾
ï¾
15
ton
ï¾
75
ï¾
td
ï¾
35
ï¾
tr
ï¾
40
ï¾
toff
ï¾
265
ï¾
ts
ï¾
230
ï¾
tf
ï¾
35
ï¾
Note:
11. Measured under pulsed conditions. Pulse width ï£ 300µs. Duty cycle ï£2%.
Unit
V
V
V
nAï
µA
nA
ï¾ï
mV
mâ¦
V
V
MHz
pF
ns
ns
ns
ns
ns
ns
Test Conditions
IC = -100µA
IC = -10mA
IE = -100µA
VCB = -48V, IE = 0
VCB = -48V, IE = 0, TA = +150°C
VEB = -5.6V, IC = 0
VCE = -2V, IC = -100mA
VCE = -2V, IC = -500mA
VCE = -2V, IC = -1A
IC = -500mA, IB = -50mA
IC = -1A, IB = -100mA
IC = -1A, IB = -50mA
IE = -0.5A, IB = -50mA
IC = -0.5A, IB = -50mA
IC = -1A, IB = -50mA
IC = -1A, IB = -100mA
VCE = -2V, IC = -0.5A
VCE = -10V, IC = -50mA,
f = 100MHz
VCB = -10V, f = 1MHz
VCC = -10V, IC = -0.5A,
IB1 = -IB2 = 25mA
DSS5160FDB
Datasheet Number: DS37619 Rev.1 - 2
4 of 7
www.diodes.com
September 2015
© Diodes Incorporated
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