DSS5160FDB Datasheet, PDF (2/7 Pages) Diodes Incorporated – DUAL PNP LOW VCE TRANSISTOR

Absolute Maximum Ratings – Q1 & Q2 (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Collector Current
Base Current
Peak Base Current
Symbol
VCBO
VCEO
VEBO
IC
ICM
IB
IBM
Value
-60
-60
-7
-1
-1.5
-300
-1
DSS5160FDB
Unit
V
V
V
A
A
mA
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
(Notes 5 & 7)
(Notes 5 & 8)
(Notes 6 & 7)
(Notes 6 & 8)
(Notes 5 & 7)
(Notes 5 & 8)
(Notes 6 & 7)
(Notes 6 & 8)
(Note 9)
Symbol
PD
RJA
RJL
TJ, TSTG
Value
405
510
1650
2470
308
245
76
51
18
-55 to +150
Unit
mW
°C/W
°C/W
°C
ESD Ratings (Note 10)
Characteristic
Electrostatic Discharge – Human Body Model
Electrostatic Discharge – Machine Model
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit
JEDEC Class
V
3A
V
C
Notes:
5. For a device mounted with the exposed collector pads on minimum recommended pad layout that is on a single-sided 1.6mm FR4 PCB; device is
measured under still air conditions whilst operating in a steady-state.
6. Same as note (5), except the device is mounted with the collector pad on 28mm x 28mm (8cm²) 2oz copper.
7. For a dual device with one active die.
8. For dual device with 2 active die running at equal power.
9. Thermal resistance from junction to solder-point (on the exposed collector pads).
10. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
DSS5160FDB
Datasheet Number: DS37619 Rev.1 - 2
2 of 7
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September 2015
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