DSS4160FDB Datasheet, PDF (4/7 Pages) Diodes Incorporated – DUAL NPN LOW VCE TRANSISTOR

DSS4160FDB
Electrical Characteristics – Q1 & Q2 (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 11)
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
DC Current Gain (Note 11)
Collector-Emitter Saturation Voltage (Note 11)
Equivalent On-Resistance (Note 11)
Base-Emitter Saturation Voltage (Note 11)
Base-Emitter Turn-on Voltage (Note 11)
Transition Frequency
Symbol Min
BVCBO
60
BVCEO
60
BVEBO
7

ICBO

IEBO

290
hFE
150
70

VCE(sat)


RCE(sat)


VBE(sat)


VBE(on)

fT
90
Typ
Max







100

50

100
430

220

110

90
120
170
220
185
240
180
240

1

1.1

1.1

0.9
175

Output (Collector) Capacitance
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
Cob (c)

ton

td

tr

toff

ts

tf

4
6
105

15

90

540

410

130

Note:
11. Measured under pulsed conditions. Pulse width  300µs. Duty cycle 2%.
Unit
V
V
V
nA
µA
nA

mV
mΩ
V
V
MHz
pF
ns
ns
ns
ns
ns
ns
Test Conditions
IC = 100µA
IC = 10mA
IE = 100µA
VCB = 48V, IE = 0
VCB = 48V, IE = 0, TA = +150°C
VEB = 5.6V, IC = 0
VCE = 2V, IC = 100mA
VCE = 2V, IC = 500mA
VCE = 2V, IC = 1A
IC = 500mA, IB = 50mA
IC = 1A, IB = 100mA
IC = 1A, IB = 50mA
IC = 500mA, IB = 50mA
IC = 0.5A, IB = 50mA
IC = 1A, IB = 50mA
IC = 1A, IB = 100mA
VCE = 2V, IC = 0.5A
VCE = 10V, IC = 50mA,
f = 100MHz
VCB = -10V, f = 1MHz
VCC = -10V, IC = -0.5A,
IB1 = -IB2 = 25mA
DSS4160FDB
Datasheet Number: DS37801 Rev.1 - 2
4 of 7
www.diodes.com
December 2015
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