DSS4160FDB Datasheet, PDF (3/7 Pages) Diodes Incorporated – DUAL NPN LOW VCE TRANSISTOR

Thermal Characteristics and Derating Information
DSS4160FDB
V
CE(sat)
1 ^Limited
See note 5 & 7
100m
10m
1m
DC
1s
100ms
10ms
1ms
Single Pulse
T =25°C
amb
100µs
100m
1
10
V Collector-Emitter Voltage (V)
CE
Safe Operating Area
330
300
T =25°C
270
amb
See note 5 & 7
240
210
180 ^D=0.5
150
120
90 D=0.2
Single Pulse
60
D=0.05
30
D=0.1
0
100µ 1m 10m 100m 1 10 100 1k
Pulse Width (s)
Transient Thermal Impedance
80
70
T =25°C
amb
60
See note 6 & 7
50 _D=0.5
40
30 _D=0.2
20
Single Pulse
D=0.05
10
D=0.1
0
100µ 1m 10m 100m 1 10 100 1k
Pulse Width (s)
Transient Thermal Impedance
2.5
2.0
1.5
1.0 _{Note 5 & 8}
0.5
Note 6 & 8
Note 6 & 7
Note 5 & 7
0.0
0 20 40 60 80 100 120 140 160
Temperature (°C)
Derating Curve
100
Single Pulse
T =25°C
amb
10
See note 5 & 7
1
0.1
100µ 1m 10m 100m 1 10 100 1k
Pulse Width (s)
Pulse Power Dissipation
100
Single Pulse
T =25°C
amb
See note 6 & 7
10
1
100µ 1m 10m 100m 1
10 100 1k
Pulse Width (s)
Pulse Power Dissipation
DSS4160FDB
Datasheet Number: DS37801 Rev.1 - 2
3 of 7
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December 2015
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