DSS3540M_15 Datasheet, PDF (4/7 Pages) Diodes Incorporated – 40V PNP LOW VCE(sat) TRANSISTOR

DSS3540M
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 9)
Emitter-Base Breakdown Voltage
Symbol
BVCBO
BVCEO
BVEBO
Min Typ
-40

-40

-6

Collector-Base Cutoff Current
ICBO


Emitter-Base Cutoff Current
IEBO


Collector-Emitter Cutoff Current
ICEX


Collector-Emitter Cutoff Current
ON CHARACTERISTICS (Note 9)
ICES


DC Current Gain
200 
hFE
150 
40

Collector-Emitter Saturation Voltage
VCE(sat)








Collector-Emitter Saturation Resistance
RCE(sat)


Base-Emitter Saturation Voltage
VBE(sat)


Base-Emitter Turn On Voltage
SMALL SIGNAL CHARACTERISTICS
VBE(on)


Output Capacitance
Cobo


Current Gain-Bandwidth Product
fT
100 
Note:
9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
Max



-100
-50
-100
-100
-100
-100



-50
-130
-200
-350
700
-1.2
-1.1
10

Unit
Test Condition
V I_C = -100µA, I_E = 0
V I_C = -10mA, I_B = 0
V I_E = -100µA, I_C = 0
nA VCB = -30V, IE = 0
µA _{VCB = -30V, IE = 0, TA = +150°C}
nA V_EB = -5V, I_C = 0
nA ^{VCE = -30V, VX = ±0.25V}
VCE = -30V, VX = 3V
nA V_CE = -30V
VCE = -2V, IC = -10mA
 V_CE = -2V, I_C = -100mA
VCE = -2V, IC = -500mA
IC = -10mA, IB = -0.5mA
mV ^{IC = -100mA, IB = -5mA}
IC = -200mA, IB = -10mA
IC = -500mA, IB = -50mA
mΩ I_C = -500mA, I_B = -50mA
V I_C = -500mA, I_B = -50mA
V V_CE = -2V, I_C = -100mA
pF V_CB = -10V, f = 1.0MHz
MHz V_CE = -5V, I_C = -100mA, f = 100MHz
DSS3540M
Document number: DS31821 Rev. 5 - 2
4 of 7
www.diodes.com
May 2015
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