DSS3540M_15 Datasheet, PDF (2/7 Pages) Diodes Incorporated – 40V PNP LOW VCE(sat) TRANSISTOR

Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Peak Pulse Collector Current
Peak Base Current
Symbol
VCBO
VCEO
VEBO
IC
ICM
IBM
DSS3540M
Value
Unit
-40
V
-40
V
-6
V
-500
mA
-1
A
-100
mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Power Dissipation
Characteristic
Thermal Resistance, Junction to Ambient
(Note 5)
(Note 6)
(Note 5)
(Note 6)
Thermal Resistance, Junction to Lead
(Note 7)
Operating and Storage and Temperature Range
Symbol
PD
R_JA
R_JL
TJ, TSTG
Value
400
1,000
310
120
120
-55 to +150
Unit
mW
°C/W
°C/W
°C
ESD Ratings (Note 8)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit JEDEC Class
V
3A
V
B
Notes:
5. For the device mounted on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air
conditions whilst operating in steady state condition. The entire exposed collector pad is attached to the heatsink.
6. Same as Note 5, except the exposed collector pad is mounted on 25mm x 25mm 2oz copper.
7. Thermal resistance from junction to solder-point (on the exposed collector pad).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
DSS3540M
Document number: DS31821 Rev. 5 - 2
2 of 7
www.diodes.com
May 2015
© Diodes Incorporated