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DRDNB16W_1 Datasheet, PDF (4/9 Pages) Diodes Incorporated – COMPLEX ARRAY FOR RELAY DRIVERS | |||
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Electrical Characteristics, DRDNB26W Pre-Biased NPN Transistor @TA = 25°C unless otherwise specified
Characteristic
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Gain-Bandwidth Product
Symbol
Vl(off)
Vl(on)
VO(on)
Il
IO(off)
Gl
fT
Min Typ Max Unit
Test Condition
0.5
â¯
â¯
V VCC = 5V, IO = 100μA
â¯
⯠3.0 V VO = 0.3V, IO = 20mA
â¯
⯠0.3V V IO/Il = 50mA/2.5mA
â¯
â¯
28 mA VI = 5V
â¯
â¯
0.5 μA VCC = 50V, VI = 0V
47
â¯
⯠⯠VO = 5V, IO = 50mA
â¯
200 ⯠MHz VCE = 10V, IE = 5mA, f = 100MHz
Electrical Characteristics, DRDPB16W Pre-Biased PNP Transistor @TA = 25°C unless otherwise specified
Characteristic
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Gain-Bandwidth Product
Symbol
Vl(off)
Vl(on)
VO(on)
Il
IO(off)
Gl
fT
Min Typ Max Unit
Test Condition
-0.3
â¯
â¯
V VCC = -5V, IO = -100μA
â¯
⯠-2.0 V VO = -0.3V, IO = -20mA
â¯
⯠-0.3V V IO/Il = -50mA/-2.5mA
â¯
⯠-7.2 mA VI = -5V
â¯
⯠-0.5 μA VCC = -50V, VI = 0V
56
â¯
⯠⯠VO = -5V, IO = -50mA
â¯
200 ⯠MHz VCE = -10V, IE = -5mA, f = 100MHz
Electrical Characteristics, DRDPB26W Pre-Biased PNP Transistor @TA = 25°C unless otherwise specified
Characteristic
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Gain-Bandwidth Product
Symbol
Vl(off)
Vl(on)
VO(on)
Il
IO(off)
Gl
fT
Min Typ Max Unit
Test Condition
-0.5
â¯
â¯
V VCC = -5V, IO = -100μA
â¯
⯠-3.0 V VO = -0.3V, IO = -20mA
â¯
⯠-0.3V V IO/Il = -50mA/-2.5mA
â¯
⯠-28 mA VI = -5V
â¯
⯠-0.5 μA VCC = -50V, VI = 0V
47
â¯
⯠⯠VO = -5V, IO = -50mA
â¯
200 ⯠MHz VCE = -10V, IE = -5mA, f = 100MHz
Electrical Characteristics, Switching Diode @TA = 25°C unless otherwise specified
Characteristic
Reverse Breakdown Voltage (Note 4)
Forward Voltage
Reverse Current (Note 4)
Total Capacitance
Reverse Recovery Time
Symbol
V(BR)R
VF
Min
75
0.62
â¯
â¯
â¯
IR
â¯
CT
â¯
trr
â¯
Max
â¯
0.72
0.855
1.0
1.25
2.5
50
30
25
4.0
4.0
Unit
â¯
V
μA
μA
μA
nA
pF
ns
Test Condition
IR = 10μA
IF = 5.0mA
IF = 10mA
IF = 100mA
IF = 150mA
VR = 75V
VR = 75V, TJ = 150°C
VR = 25V, TJ = 150°C
VR = 20V
VR = 0, f = 1.0MHz
IF = IR = 10mA,
Irr = 0.1 x IR, RL = 100Ω
Notes: 4. Short duration pulse test used to minimize self-heating effect.
DS30573 Rev. 10 - 2
4 of 9
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