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DRDNB16W_1 Datasheet, PDF (3/9 Pages) Diodes Incorporated – COMPLEX ARRAY FOR RELAY DRIVERS
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Electrical Characteristics, DRDN010W NPN Transistor @TA = 25°C unless otherwise specified
Characteristic
DC Current Gain
Collector-Emitter Saturation Voltage
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Current Gain-Bandwidth Product
Capacitance
Symbol
hFE
VCE(SAT)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
fT
Cobo
Min
150
⎯
45
18
5
⎯
⎯
100
⎯
Max
800
0.5
⎯
⎯
⎯
1
1
⎯
8
Unit
⎯
V
V
V
V
μA
μA
MHz
pF
Test Condition
IC = 100mA, VCE = 1V
IC = 300mA, IB = 30mA
IC = 100μA, IE = 0
IC = 1mA, IB = 0
IE = 100μA, IC = 0
VCB = 40V, IE = 0
VEB = 4V, IC = 0
VCE = 10V, IC = 50mA, f = 100MHz
VCB = 10V, IE = 0, f = 1MHz
Electrical Characteristics, DRDN005W NPN Transistor @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain-Bandwidth Product
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICES
hFE
VCE(SAT)
VBE(SAT)
fT
Min
80
80
4.0
⎯
⎯
100
⎯
⎯
100
Max
⎯
⎯
⎯
100
100
⎯
0.25
1.2
⎯
Unit
V
V
V
nA
nA
⎯
V
V
MHz
Test Condition
IC = 100μA, IE = 0
IC = 1.0mA, IB = 0
IE = 100μA, IC = 0
VCB = 60V, IE = 0
VCB = 80V, IE = 0
VCE = 60V, IBO = 0V
VCE = 80V, IBO = 0V
IC = 10mA, VCE = 1.0V
IC = 100mA, VCE = 1.0V
IC = 100mA, IB = 10mA
IC = 100mA, VCE = 1.0V
VCE = 2.0V, IC = 10mA,
f = 100MHz
Electrical Characteristics, DRDP006W PNP Transistor @TA = 25°C unless otherwise specified
Characteristic
DC Current Gain
Collector-Emitter Saturation Voltage
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Current Gain-Bandwidth Product
Capacitance
Symbol
hFE
VCE(SAT)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
fT
Cobo
Min
100
⎯
-60
-60
-5
⎯
200
⎯
Max
300
-0.4
⎯
⎯
⎯
-10
⎯
8
Unit
⎯
V
V
V
V
nA
MHz
pF
Test Condition
IC = -150mA, VCE = -10V
IC = -150mA, IB = -15mA
IC = -10μA, IE = 0
IC = -10mA, IB = 0
IE = -10μA, IC = 0
VCB = -50V, IE = 0
VCE = -20V, IC = -50mA, f = 100MHz
VCB = -10V, IE = 0, f = 1MHz
Electrical Characteristics, DRDNB16W Pre-Biased NPN Transistor @TA = 25°C unless otherwise specified
Characteristic
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Gain-Bandwidth Product
Symbol
Vl(off)
Vl(on)
VO(on)
Il
IO(off)
Gl
fT
Min Typ Max Unit
Test Condition
0.3
⎯
⎯
V VCC = 5V, IO = 100μA
⎯
⎯ 2.0 V VO = 0.3V, IO = 20mA
⎯
⎯ 0.3V V IO/Il = 50mA/2.5mA
⎯
⎯ 7.2 mA VI = 5V
⎯
⎯ 0.5 μA VCC = 50V, VI = 0V
56
⎯
⎯ ⎯ VO = 5V, IO = 50mA
⎯
200 ⎯ MHz VCE = 10V, IE = 5mA, f = 100MHz
DS30573 Rev. 10 - 2
3 of 9
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