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DMS3017SSD Datasheet, PDF (4/10 Pages) Diodes Incorporated – ASYMMETRIC DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
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DMS3017SSD
0.05
0.04
0.03
0.02
0.01
VGS = 4.5V
VGS = 10V
0.04
VGS = 10V
0.03
0.02
0.01
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
TA = -55°C
0
0
5
10
15
20
25
30
ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
1.7
1.5
VGS = 4.5V
ID = 5A
1.3
VGS = 10V
ID = 10A
1.1
0.9
0.7
0.5
-50 -25 0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
2.0
1.8
1.6
1.4
ID = 1mA
1.2
ID = 250µA
1.0
0.8
0.6
-50 -25 0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
0
0
0.06
5
10
15
20
25
30
ID, DRAIN CURRENT (A)
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
0.05
0.04
0.03
VGS = 4.5V
ID = 5A
0.02
0.01
VGS = 10V
ID = 10A
0
-50 -25 0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
20
18
16
14
12
TA = 25°C
10
8
6
4
2
0
0.2
0.4
0.6
0.8
1.0
1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
DMS3017SSD
Document number: DS35052 Rev. 2 - 2
4 of 10
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October 2010
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