DMS3017SSD Datasheet, PDF (1/10 Pages) Diodes Incorporated – ASYMMETRIC DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

DMS3017SSD
ASYMMETRIC DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Features
• DIOFET utilize a unique patented process to monolithically
integrate a MOSFET and a Schottky in a single die to deliver:
• Low R_DS(on) – minimizes conduction loss
• Low V_SD – reducing the losses due to body diode
construction
• Low Q_rr – lower Q_rr of the integrated Schottky reduces body
diode switching losses
• Low gate capacitance (Q_g/Q_gs) ratio – reduces risk of shoot-
through or cross conduction currents at high frequencies
• Avalanche rugged – I_AR and E_AR rated
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SO-8
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram Below
• Weight: 0.072 grams (approximate)
Top View
Q1
Q2
D2
G2
D₁
D₂
D2
S2/D1
G1
S2/D1
S1
S2/D1
Top View
Internal Schematic
G₁
G₂
S₁
N-Channel MOSFET +
Integrated Schottky Diode
S₂
N-Channel MOSFET
Ordering Information (Note 3)
Notes:
Part Number
DMS3017SSD-13
Case
SO-8
Packaging
2500 / Tape & Reel
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
DMS3017SSD
Document number: DS35052 Rev. 2 - 2
Top View
8
5
S3017SD
YY WW
1
4
Logo
Part no.
Week: 01 ~ 53
Year: “09” = 2009
1 of 10
www.diodes.com
October 2010
© Diodes Incorporated