CTA2P1N_2 Datasheet, PDF (4/5 Pages) Diodes Incorporated – COMPLEX TRANSISTOR ARRAY

MMBT4403 Section (Continued)
200
150
100
50
0
0 25 50 75 100 125 150 175 200
T_A, AMBIENT TEMPERATURE (°C)
Fig. 7 Max Power Dissipation vs.
Ambient Temperature (Total Device)
2N7002 Section
1.0 _{VGS = 10V}
9.0V
8.0V
7.0V
0.8
6.5V
6.0V
5.0V
4.5V
4.0V
0.6
3.5V
3.0V
2.5V
2.0/1.0V
0.4
7
6
5
5.5V
4
5.0V
3
2
0.2
1
V_GS = 5.0V
V_GS = 10V
T_j = 25°C
0
0
3.0
1
2
3
4
5
V_DS, DRAIN-SOURCE VOLTAGE (V)
Fig. 8 On-Region Characteristics (2N7002)
0
0
0.2
0.4
0.6
0.8
1.0
I_D, DRAIN CURRENT (A)
Fig. 9 On-Resistance vs. Drain Current (2N7002)
6
5
2.5
4
I_D = 500mA
2.0
I_D = 50mA
3
2
1.5
V_GS = 10V,
1
I_D = 200mA
1.0
-55 -30
-5 20 45 70 95 120 145
0
0 2 4 6 8 10 12 14 16 18
T_j, JUNCTION TEMPERATURE (°C)
Fig. 10 On-Resistance vs. Junction Temperature (2N7002)
V_GS, GATE TO SOURCE VOLTAGE (V)
Fig. 11 On-Resistance vs. Gate-Source Voltage (2N7002)
DS30296 Rev. 9 - 2
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