CTA2P1N_2 Datasheet, PDF (2/5 Pages) Diodes Incorporated – COMPLEX TRANSISTOR ARRAY

Electrical Characteristics, Q1, MMBT4403 PNP Transistor Element
@T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 5)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
Current Gain-Bandwidth Product
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
Symbol Min
Max
Unit
Test Condition
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CEX
I_BL
-40
-40
-5.0
⎯
⎯
⎯
⎯
⎯
-100
-100
V I_C = -100μA, I_E = 0
V I_C = -1.0mA, I_B = 0
V I_E = -100μA, I_C = 0
nA V_CE = -35V, V_EB(OFF) = -0.4V
nA V_CE = -35V, V_EB(OFF) = -0.4V
30
60
h_FE
100
100
20
V_CE(SAT)
V_BE(SAT)
⎯
-0.75
⎯
⎯
⎯
⎯
300
⎯
-0.40
-0.75
-0.95
-1.30
I_C = -100µA, V_CE = -1.0V
I_C = -1.0mA, V_CE = -1.0V
⎯ ^{IC = -10mA, VCE = -1.0V}
I_C = -150mA, V_CE = -2.0V
I_C = -500mA, V_CE = -2.0V
V ^{IC = -150mA, IB = -15mA}
I_C = -500mA, I_B = -50mA
V ^{IC = -150mA, IB = -15mA}
I_C = -500mA, I_B = -50mA
C_cb
⎯
8.5
pF V_CB = -10V, f = 1.0MHz, I_E = 0
C_eb
⎯
30
pF V_EB = -0.5V, f = 1.0MHz, I_C = 0
h_ie
1.5
15
kΩ
h_re
0.1
8.0
x 10^-4 _{VCE = -10V, IC = -1.0mA,}
h_fe
60
500
⎯ ^{f = 1.0kHz}
h_oe
1.0
100
μS
f_T
200
⎯
MHz
V_CE = -10V, I_C = -20mA,
f = 100MHz
t_d
⎯
15
ns _{VCC = -30V, IC = -150mA,}
t_r
⎯
20
ns ^VBE(off) ^{= -2.0V, I}B1 ^{= -15mA}
t_s
⎯
225
ns _{VCC = -30V, IC = -150mA,}
t_f
⎯
30
ns ^IB1 ^{= I}B2 ^{= -15mA}
Electrical Characteristics, Q2, 2N7002 N-Channel MOSFET Element
@T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
@ T_C = 25°C
@ T_C = 125°C
@ T_j = 25°C
@ T_j = 125°C
Symbol Min Typ Max Unit
Test Condition
BV_DSS 60 70 ⎯
V V_GS = 0V, I_D = 10μA
I_DSS
⎯
⎯
1.0
500
µA V_DS = 60V, V_GS = 0V
I_GSS
⎯ ⎯ ±10 nA V_GS = ±20V, V_DS = 0V
V_GS(th) 1.0
R_{DS (ON)} ⎯
I_D(ON)
0.5
g_FS
80
⎯ 2.0 V V_DS = V_GS, I_D =-250μA
3.2 7.5
4.4 13.5
Ω ^{VGS = 5.0V, ID = 0.05A}
V_GS = 10V, I_D = 0.5A
1.0 ⎯
A V_GS = 10V, V_DS = 7.5V
⎯ ⎯ mS V_DS =10V, I_D = 0.2A
C_iss
C_oss
C_rss
⎯ 22 50 pF
⎯
11
25
pF
V_DS = 25V, V_GS = 0V
f = 1.0MHz
⎯ 2.0 5.0 pF
t_D(ON)
⎯ 7.0 20 ns _{VDD = 30V, ID = 0.2A,}
t_D(OFF)
⎯
11
20
ns ^{RL = 150Ω, VGEN = 10V, RGEN = 25Ω}
Notes: 5. Short duration pulse test used to minimize self-heating effect.
DS30296 Rev. 9 - 2
2 of 5
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