APT13003NZ Datasheet, PDF (4/7 Pages) Diodes Incorporated – 530V NPN HIGH VOLTAGE POWER TRANSISTOR IN TO92

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
DC Current Transfer Static Ratio (Note 6)
Symbol
Min
Typ
BVCES
900
—
BVCEO
530
—
BVEBO
10
—
ICEV
—
—
15
hFE
5
17
—
Collector-Emitter Saturation Voltage (Note 6)
VCE(SAT)
—
—
0.17
0.30
Base-Emitter Saturation Voltage (Note 6)
—
VBE(SAT)
—
—
—
Transition Frequency
Turn-on Time with Resistive Load
Storage Time with Resistive Load
Fall Time with Resistive Load
fT
4
—
tON
—
—
tS
—
—
tF
—
—
Note:
6. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤ 2%.
Max
—
—
—
10
30
25
0.3
0.4
1.0
1.2
—
1
3.5
0.65
APT13003NZ
Unit
V
V
V
µA
—
—
V
V
MHz
µs
Test Condition
IC = 100µA, VBE = 0V
IC = 100µA
IE = 100µA
VCE = 900V
IC = 0.5A, VCE = 2V
IC = 1.0A, VCE = 2V
IC = 0.5A, IB = 0.1A
IC = 1A, IB = 0.25A
IC = 0.5A, IB = 0.1A
IC = 1A, IB = 0.25A
IC = 0.1A, VCE = 10V
IC = 1A,VCC = 125V, IB1 = 0.2A,
IB2 = -0.2A, tp = 25µs
APT13003NZ
Document number: DS37774 Rev. 1 - 2
4 of 7
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July 2015
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