APT13003NZ Datasheet, PDF (2/7 Pages) Diodes Incorporated – 530V NPN HIGH VOLTAGE POWER TRANSISTOR IN TO92

Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Emitter Voltage (VBE = 0V)
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Collector Current
Continuous Base Current
Peak Pulse Base Current
Symbol
VCES
VCEO
VEBO
IC
ICM
IB
IBM
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation
Thermal Resistance, Junction to Ambient Air
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
Symbol
PD
RθJA
RθJC
TJ,TSTG
Value
900
530
10
1.5
3
0.75
1.5
APT13003NZ
Unit
V
V
V
A
A
A
A
Value
1.0
125
83.3
-55 to +150
Unit
W
°C/W
°C/W
°C
ESD Ratings (Note 5)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Note: 5. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
Symbol
ESD HBM
ESD MM
Value
8,000
400
Unit
JEDEC Class
V
3B
V
C
APT13003NZ
Document number: DS37774 Rev. 1 - 2
2 of 7
www.diodes.com
July 2015
© Diodes Incorporated