English
Language : 

74HC125 Datasheet, PDF (4/9 Pages) NXP Semiconductors – Quad buffer/line driver; 3-state
74HC125
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Symbol
Parameter
VIH
High-level Input
Voltage
VIL
Low-level Input
voltage
VOH
High-level Output
Voltage
VOL
Low-level Output
Voltage
IOZ
Z State
Leakage Current
II
Input Current
ICC Supply Current
Test Conditions
IOH = -20μA
IOH = -20μA
IOH = -20μA
IOH = -4.0mA
IOH = -5.2mA
IOL = 20μA
IOL = 20μA
IOL = 20μA
IOL = 4mA
IOL = 5.2mA
VO = 0 to 6.0V
VI = GND or 6.0V
VI = GND to 5.5V
VI = GND or VCC, IO = 0
VCC
2.0V
4.5V
6.0V
2.0V
4.5V
6.0V
2.0V
4.5V
6.0V
4.5V
6.0V
2.0V
4.5V
6.0V
4.5V
6.0V
6.0V
6.0V
6.0V
TA = -40°C to +85°C
Min
Max
1.5
3.15
4.2
0.5
1.35
1.8
1.9
4.4
5.9
3.84
5.34
0.1
0.1
0.1
0.33
0.33
± 5.0
±1
20
TA = -40°C to +125°C
Unit
Min
Max
1.5
3.15
V
4.2
0.5
1.35
V
1.8
1.9
4.4
5.9
V
3.7
5.2
0.1
0.1
0.1
V
0.44
0.44
± 10
μA
±1
μA
40
μA
Switching Characteristics
Symbol
Parameter
Test
Conditions
Propagation
Figure 1
tPD
Delay AN to YN CL = 50 pF
tEN Enable Time
OEN to YN
Figure 1
CL = 50 pF
tDIS Disable Time
OE to YN
Figure 1
CL = 50 pF
Figure 1
tt
Transition time
CL = 50 pF
VCC
2.0V
4.5V
6.0V
2.0V
4.5V
6.0V
2.0V
4.5V
6.0V
2.0V
4.5V
6.0V
TA = +25°C
Min
Typ.
Max
—
30
100
—
11
20
—
9
17
—
41
125
—
15
25
—
12
21
—
41
125
—
15
25
—
12
21
—
14
60
—
5
12
—
4
10
-40°C to +85°C -40°C to +125°C
Unit
Max
Max
125
150
25
30
ns
21
26
155
190
31
38
ns
26
32
155
190
31
38
ns
26
32
75
90
15
18
ns
13
15
Operating Characteristics (@TA = +25°C, unless otherwise specified.)
Parameter
Test Conditions
VCC = 6V
Typ
Unit
Cpd
Power Dissipation
Capacitance per Gate
f = 1MHz
22
pF
CI
Input Capacitance VI = VCC – or GND
4
pF
74HC125
Document number: DS35326 Rev. 3 - 2
4 of 9
www.diodes.com
January 2013
© Diodes Incorporated