 English |
|
|
|
|
|
|
|
| ZXTP5401FL_15 Datasheet, PDF (3/6 Pages) Diodes Incorporated – 150V PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR IN SOT23 | |||
| |||
| ◁ |
A Product Line of
Diodes Incorporated
ZXTP5401FL
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 8)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Symbol
BVCBO
BVCEO
BVEBO
ICBO
Min
-160
-150
-5
-
50
Static Forward Current Transfer Ratio (Note 8)
hFE
60
50
Collector-Emitter Saturation Voltage (Note 8)
VCE(sat)
-
-
Base-Emitter Saturation Voltage (Note 8)
VBE(sat)
-
Output Capacitance
Cobo
-
Transition Frequency
fT
-
Delay Time
Rise Time
Storage Time
Fall Time
t(d)
-
t(r)
-
t(s)
-
t(f)
-
Notes: 8. Measured under pulsed conditions. Pulse width ⤠300 µs. Duty cycle ⤠2%
Typ
-270
-240
-8.1
< -1
-
135
135
130
-50
-70
-700
-750
-
100
386
202
1720
275
Max
-
-
-
-50
-50
-
240
-
-200
-500
-1000
-1000
10
-
-
-
-
-
Unit
V
V
V
nA
µA
-
mV
mV
pF
MHz
ns
ns
ns
ns
Test Condition
IC = -100µA
IC = -1mA
IE = -100µA
VCB = -120V
VCB = -120V, Tamb = 100°C
IC = -1mA, VCE = -5V
IC = -10mA, VCE = -5V
IC = -50mA, VCE = -5V
IC = - 10mA, IB = -1mA
IC = - 50mA, IB = -5mA
IC = -10mA, IB = -1mA
IC = -50mA, IB = -5mA
VCB = -10V, f = 1MHz
VCE = -10V, IC = -10mA,
f = 100MHz
VCC = -50V, IC = -100mA,
IB1 = IB2 = -10mA
ZXTP5401FL
Document Number: DS33724 Rev. 2 - 2
3 of 6
www.diodes.com
June 2012
© Diodes Incorporated
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese