ZXTP5401FL_15 Datasheet, PDF (2/6 Pages) Diodes Incorporated – 150V PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR IN SOT23

Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CM
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Diodes Incorporated
ZXTP5401FL
Value
Unit
-160
V
-150
V
-5
V
-600
mA
-1
A
Thermal Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Collector Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Leads
Operating and Storage Temperature Range
(Note 5)
(Note 6)
(Note 5)
(Note 6)
(Note 7)
Symbol
P_D
R_θJA
R_θJL
T_J, T_STG
Value
310
350
403
357
350
-55 to +150
Unit
mW
°C/W
°C/W
°C
Notes:
5. For the device mounted on minimum recommended pad layout FR4 PCB with high coverage of single sided 1oz copper in still air condition;
6. Same as Note 5, expect the device is mounted on 15mm X 15mm X 1.6mm FR4 PCB
7. Thermal resistance from junction to solder-point (at the end of the collector lead).
0.4
0.3
0.2
0.1
0.0
0
25 50 75 100 125 150
Temperature (°C)
Derating Curve
10
Single Pulse. T =25°C
amb
400
350
300
250
D=0.5
200
150
100 ^D=0.2
D=0.1
Single Pulse
50
D=0.05
0
100µ 1m 10m 100m 1 10 100 1k
Pulse Width (s)
Transient Thermal Impedance
1
0.1
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Power Dissipation
ZXTP5401FL
Document Number: DS33724 Rev. 2 - 2
2 of 6
www.diodes.com
June 2012
© Diodes Incorporated