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ZXTN4004K Datasheet, PDF (3/5 Pages) Diodes Incorporated – 150V NPN LED DRIVING TRANSISTOR IN TO252
A Product Line of
Diodes Incorporated
ZXTN4004K
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Collector-Emitter Breakdown Voltage (Note 6)
Collector Cut-off Current
Emitter Cut-off Current
Static Forward Current Transfer Ratio (Note 6)
Base-Emitter Turn-On Voltage (Note 6)
Delay Time
Rise Time
Storage Time
Fall Time
Storage Time
Fall Time
Symbol
BVCEO
ICBO
IEBO
hFE
VBE(on)
t(d)
t(r)
t(s)
t(f)
t(s)
t(f)
Min Typ Max
150 175
-
-
-
50
-
-
50
60
-
-
100
-
-
-
0.71 0.95
-
512
-
-
426
-
-
3413
-
-
321
-
-
65
-
-
294
-
Notes: 6. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle ≤ 2%
Unit
V
nA
nA
-
V
ns
ns
ns
ns
ns
ns
Test Condition
IC = 10mA
VCB = 150V
VEB = 7V
IC = 85mA, VCE = 0.20V
IC = 150mA, VCE = 0.25V
IC = 150mA, VCE = 0.25V
VCC = 120V, IC = 150mA,
-IB2 = 1.5mA, VCE(ON) = 0.25V
VCC = 120V, IC = 150mA,
-IB2 = 1.5mA, VCE(ON) = 4V
Typical Characteristics
700 125°C
V =0.25V
CE
600
85°C
500
400 25°C
300
200 -55°C
100
0
100µ
1m
10m
100m
1
I Collector Current (A)
C
h vI
FE C
1.0
V =0.25V
CE
0.8
25°C
-55°C
0.6
0.4
125°C
0.2
100µ
30
25
85°C
1m
10m
100m
1
I Collector Current (A)
C
V vI
BE(on) C
f = 1MHz
20
15
10
Cobo
5
0
100m
1
10
100
Voltage(V)
Capacitance v Voltage
ZXTN4004K
Document Number: DS35458 Rev: 1 - 2
3 of 5
www.diodes.com
December 2011
© Diodes Incorporated